GERMANIUM NO FURTHER A MYSTERY

≤ 0.fifteen) is epitaxially developed with a SOI substrate. A thinner layer of Si is grown on this SiGe layer, and afterwards the framework is cycled by means of oxidizing and annealing levels. Mainly because of the preferential oxidation of Si over Ge [sixty eight], the first Si1–Depending on these procedures, We've got analyzed strains Normal